Type | Description |
---|---|
Catégorie | transistors. |
Fabricant | Toshiba Semiconductor and Storage |
Série | - |
État du produit | Occupé |
Emballage | Bandes et bobines (TR) |
Emballage / Boîte | TO-236-3, SC-59, SOT-23-3 |
Type d'installation | Installation en surface |
Transistor Type | PNP - Pre-Biased |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Pack d'équipement du fournisseur | S-Mini |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Power - Max | 200 mW |
Frequency - Transition | 200 MHz |
Resistor - Base (R1) | 47 kOhms |
Propriétés | Description |
---|---|
Statut ROHS | ROHS3 Compliant |
Sensibilité à l'humidité (MSL) | |
Statut REACH | Reach unknown |
ECCN | |
HTSUS |
quantité | prix unitaire | prix total |
---|---|---|
3000 | $0.03091 | $92.73 |
6000 | $0.02788 | $167.28 |
15000 | $0.02424 | $363.6 |
30000 | $0.02182 | $654.6 |
75000 | $0.01939 | $1454.25 |
150000 | $0.01612 | $2418 |
Quantité minimum de commande:3000 |